Graphical analysis of Current-Voltage Characteristics in Typical Memristive Interfaces

Abstract

A graphical representation based on the isothermal current-voltage (IV) measurements of typical memristive interfaces is presented. This is the starting point to extract relevant microscopic information of the parameters that control the electrical properties of a device based on a particular metal-oxide interface. The convenience of the method is illustrated presenting some examples were the IV characteristics were simulated in order to gain insight on the influence of the fitting parameters.

8 pages, 9 figures, Corresponding author: C. Acha ([email protected])

References in corpus (2)

• Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures
• Transport mechanism through metal-cobaltite interfaces

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