10 citations · 12 across the 8 of their papers we have counts for
9 papers
Engineering Synaptic Dynamics in Ag-Modified TaO Memristive Devices
R. Leal Martir, W. Quiñonez, A. J. T. van der Ree +4
Engineering not only the magnitude but also the dynamics of synaptic weight updates is an important challenge for memristive neuromorphic hardware. Here, we show that Ag modificati…
Tuning the memristive response of TaO-based devices with Ag Nanoparticles
R. Leal Martir, A. J. T. van der Ree, M. H. Aguirre +3
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and ruptur…
Modeling Memristor-Based Neural Networks with Manhattan Update: Trade-offs in Learning Performance and Energy Consumption
Walter Quiñonez, María José Sánchez, Diego Rubi
We present a systematic study of memristor based neural networks trained with the hardware-friendly Manhattan update rule, focusing on the trade offs between learning performance a…
Synaptic plasticity in Co/Nb:STO memristive devices: The role of oxygen vacancies
Walter Quiñonez, Anouk Goossens, Diego Rubi +2
Neuromorphic computing aims to develop energy-efficient devices that mimic biological synapses. One promising approach involves memristive devices that can dynamically adjust their…
Oxygen vacancy engineering in pulsed laser deposited BaSnO thin films on SrTiO
Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda +1
We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn, BSO) thin films by precisely controlling the background oxygen pr…
Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices
Wilson Román Acevedo, Myriam H. Aguirre, Diego Rubi
Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observ…
Oxygen vacancies kinetics in / memristive interfaces
C. Ferreyra, R. Leal Martir, D. Rubi +1
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combina…
Coexistance of volatile and non-volatile memristive effects in phase-separated LaCaMnO-based devices
G. A. Ramírez, W. Román Acevedo, M. Rengifo +4
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated LaCaMnO thin fil…
Large memcapacitance and memristance at Nb:SrTiO / LaSrMnCoO Topotactic Redox Interface
W. R. Acevedo, C. A. M. van den Bosch, M. H. Aguirre +7
The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive system…