3 papers
physics.app-ph2020
On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
C. Ferreyra, M. Rengifo, M. J. Sánchez +3
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of…
physics.app-ph2019
Electric selective activation of memristive interfaces in TaO-based devices
C. Ferreyra, M. J. Sánchez, M. Aguirre +5
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functi…
cond-mat.mes-hall2018
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
Cristian Ferreyra, Wilson Román Acevedo, Ralph Gay +2
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic…