29 citations · 76 across the 9 of their papers we have counts for
9 papers
Oxygen vacancies kinetics in / memristive interfaces
C. Ferreyra, R. Leal Martir, D. Rubi +1
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combina…
Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO-based devices
C. Ferreyra, M. Badillo, M. J. Sánchez +3
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization…
Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
Rodrigo Leal Martir, María José Sánchez, Myriam Aguirre +6
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually link…
Optimization of the multi-mem response of topotactic redox LaSrMnCoO
W. Román Acevedo, M. H. Aguirre, C. Ferreyra +6
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrica…
On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
C. Ferreyra, M. Rengifo, M. J. Sánchez +3
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of…
Electric selective activation of memristive interfaces in TaO-based devices
C. Ferreyra, M. J. Sánchez, M. Aguirre +5
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functi…