On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

Abstract

Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices.

arXiv comment23 pages in preprint form, 5 figures

References in corpus (15)

• A ferroelectric memristor
• Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO${}_3$ Capacitors
• Metal-Ferroelectric-Metal heterostructures with Schottky contacts I. Influence of the ferroelectric properties
• Mechanism for bipolar resistive switching in transition metal oxides
• Tunneling Electroresistance in Ferroelectric Tunnel Junctions with a Composite Barrier
• Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles
• Factors controlling oxygen migration barriers in perovskites
• Resistance profile measurements on a symmetric electrical pulse induced resistance change device
• Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
• Polarization Controlled Ohmic to Schottky Transition at a Metal/Doped Ferroelectric Interface
• BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response
• Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
• Periodicity doubling cascades: direct observation in ferroelastic materials
• Electric selective activation of memristive interfaces in TaO${}_x$-based devices
• Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response

Cited by in corpus (3)

• Evidence of the ferroelectric polarization in charge transport through WTe${}_2$ Weyl semimetal surface
• Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
• Coexistance of volatile and non-volatile memristive effects in phase-separated La${}_{0.5}$Ca${}_{0.5}$MnO${}_3$-based devices