Polarization Controlled Ohmic to Schottky Transition at a Metal/Doped Ferroelectric Interface

Abstract

Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3. The co-existence of a ferroelectric phase and conductivity opens the door to new functionalities which may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling we explore the effect that the switchable polarization of electron-doped BaTiO3 (n-BaTiO3) has on the electronic properties of the SrRuO3/n-BaTiO3 (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the n-BTO conduction band determines the transport regime across the interface. The interface exhibits a Schottky tunnel barrier for one polarization orientation, whereas an Ohmic contact is present for the opposite polarization orientation, leading to a large change in interface resistance associated with polarization reversal. Calculations reveal a large (five orders of magnitude) change in the interface resistance as a result of polarization switching.

7 pages, 9 figures

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Cited by in corpus (6)

• Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO${}_3$/Co
• On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
• Electric control of spin injection into a ferroelectric semiconductor
• Interface control of ferroelectricity in LaNiO3-BaTiO3 superlattices
• Proximity coupling of granular film with ferroelectric substrate and giant electro-resistance effect
• Tuning Band Alignment and Optical Properties of 2D van der Waals Heterostructure via Ferroelectric Polarization Switching