Mechanism for bipolar resistive switching in transition metal oxides

Abstract

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figures

References in corpus (3)

• Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides
• Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution
• Non-volatile resistive switching in dielectric superconductor YBCO

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