Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides

Abstract

Electric pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around the negative pulse maximum for films deposited in an oxygen deficient ambient. The device resistance hysteresis loop consists of stable high resistance and low resistance states, and transition regions between them. The resistance relaxation of the "shuttle peak" and its temperature behavior as well as the resistance relaxation in the transition regions were studied, and indicate that the resistance switching relates to oxygen diffusion with activation energy about 0.4eV. An oxygen diffusion model with the oxygen ions (vacancies) as the active agent is proposed for the non-volatile resistance switching effect in PCMO.

7 pages, 5 figures

References in corpus (2)

• Spatially extended nature of resistive switching in perovskite oxide thin films
• Mechanism and Scalability in Resistive Switching of Metal-Pr0.7Ca0.3MnO3 Interface

Cited by in corpus (26)

• Memory effects in complex materials and nanoscale systems
• Robust memristors based on layered two-dimensional materials
• Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing
• Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
• Mechanism for bipolar resistive switching in transition metal oxides
• Solving mazes with memristors: a massively-parallel approach
• Imaging Oxygen Defects and their Motion at a Manganite Surface
• In situ TEM investigation of oxygen migration as a key mechanism for resistive switching in Pr0.7Ca0.3MnO3
• Hysteresis Switching Loops in Ag-manganite memristive interfaces
• Resistance switching in oxides with inhomogeneous conductivity
• Non-volatile resistive switching in dielectric superconductor YBCO
• Non-equilibrium character of resistive switching and negative differential resistance in Ga-doped Cr2O3 system
• Shock-waves and commutation speed of memristors
• A mechanism for unipolar resistance switching in oxide non-volatile memory devices
• Two opposite hysteresis curves in semiconductors with mobile dopants
• Asymmetric pulsing for reliable operation of titanium/manganite memristors
• Interplay of bulk and interface effects in the electric-field driven transition in magnetite
• Modelling of Current Percolation Channels in Emerging Resistive Switching Elements
• Electric field driven destabilization of the insulating state in nominally pure LaMnO3
• The electric pulses induced multi-resistance states in the hysteresis temperature range of 1T-TaS2 and 1T-TaS1.6Se0.4
• A Memcomputing Pascaline
• Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
• Optimization of the multi-mem response of topotactic redox La${}_{1/2}$Sr${}_{1/2}$Mn${}_{1/2}$Co${}_{1/2}$O${}_{3-x}$
• Stochastic Dynamics of Resistive Switching: Fluctuations Lead to Optimal Particle Number
• Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model
• Current-voltage characteristics and resistive switching in epitaxial La${}_{0.67}$Sr${}_{0.33}$MnO${}_3$/SrMnO${}_3$/La${}_{0.67}$Sr${}_{0.33}$MnO${}_3$ multilayer