Spatially extended nature of resistive switching in perovskite oxide thin films

Abstract

We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short pulse voltage switching conditions. It is important for future nanoscale non-volatile memory device applications.

arXiv comment11 pages, 3 figures

References in corpus (4)

• Complexity in Strongly Correlated Electronic Systems
• Field-Driven Hysteretic and Reversible Resistive Switch at the Ag-Pr0.7Ca0.3MnO3 Interface
• Resistance profile measurements on a symmetric electrical pulse induced resistance change device
• Electrical transport and glassy response in strained thin La0.7Ca0.3MnO3 films

Cited by in corpus (6)

• Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides
• Conductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$
• A Study of Apparent Symmetry Breakdown in Perovskite Oxide-based Symmetric RRAM Devices
• Layer-by-layer resistive switching: multi-state functionality due to electric-field-induced healing of "dead" layers
• Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions
• Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model