Layer-by-layer resistive switching: multi-state functionality due to electric-field-induced healing of "dead" layers

Abstract

Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic circuits. Here we report on a structurally driven switching mechanism involving the so-called `dead layers' of perovskite manganite surfaces. Forming a tunnel barrier whose thickness can be changed in monolayer steps by electrical fields, the switching effect exhibits well-defined and robust resistive states.

References in corpus (5)

• A ferroelectric memristor
• Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films
• Thickness dependent magnetotransport in ultra-thin manganite films
• Spatially extended nature of resistive switching in perovskite oxide thin films
• High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity

Cited by in corpus (1)

• Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model