activity
20162022
most citedMassively strained VO2 thin film growth on RuO2

21 citations · 33 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2022★ 4 cited

Low-energy electron microscopy intensity-voltage data -- factorization, sparse sampling, and classification

Francesco Masia, Wolfgang Langbein, Simon Fischer +2

Low-energy electron microscopy (LEEM) taken as intensity-voltage (I-V) curves provides hyperspectral images of surfaces, which can be used to identify the surface type, but are dif…

cond-mat.str-el2020★ 1 cited

The Breakdown of Mott Physics at VO Surfaces

Matthew J. Wahila, Nicholas F. Quackenbush, Jerzy T. Sadowski +12

Transition metal oxides such as vanadium dioxide (VO), niobium dioxide (NbO), and titanium sesquioxide (TiO) are known to undergo a temperature-dependent metal-insu…

cond-mat.mtrl-sci2020★ 1 cited

Switching friction at a manganite surface using electric fields

H. Schmidt, J. -O. Krisponeit, N. Weber +2

We report active control of the friction force at the contact between a nanoscale asperity and a LaCaMnO (LCMO) thin film using electric fields. We use fricti…

cond-mat.mtrl-sci2020★ 21 cited

Massively strained VO2 thin film growth on RuO2

Simon Fischer, Jon-Olaf Krisponeit, Michael Foerster +3

Strain engineering vanadium dioxide thin films is one way to alter this material's characteristic first order transition from semiconductor to metal. In this study we extend the ex…

cond-mat.mtrl-sci2018★ 6 cited

Layer-by-layer resistive switching: multi-state functionality due to electric-field-induced healing of "dead" layers

Jon-Olaf Krisponeit, Bernd Damaschke, Vasily Moshnyaga +1

Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effec…

cond-mat.mtrl-sci2016

Controlling friction in a manganite surface by resistive switching

Hendrik Schmidt, Jon-Olaf Krisponeit, Konrad Samwer +1

We report a significant change in friction of a thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at…