most citedEvidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides

521 citations · 732 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.str-el2006★ 521 cited

Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides

Y. B. Nian, J. Strozier, N. J. Wu +2

Electric pulse induced resistance (EPIR) switching hysteresis loops for Pr0.7Ca0.7MnO3 (PCMO) perovskite oxide films were found to exhibit an additional sharp "shuttle peak" around…

cond-mat.str-el2006★ 100 cited

Spatially extended nature of resistive switching in perovskite oxide thin films

Xin Chen, NaiJuan Wu, John Strozier +1

We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM te…

cond-mat.str-el2005★ 13 cited

Buffer-Enhanced Electrical-Pulse-Induced-Resistive Memory Effect in Thin Film Perovskites

Xin Chen, Naijuan Wu, Alex Ignatiev +2

A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film elect…

cond-mat.str-el2005★ 10 cited

A Study of Apparent Symmetry Breakdown in Perovskite Oxide-based Symmetric RRAM Devices

X. Chen, J. Strozier, N. J. Wu +2

A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The mode…

cond-mat.str-el2005★ 88 cited

Resistance profile measurements on a symmetric electrical pulse induced resistance change device

X. Chen, J. Strozier, N. J. Wu +1

We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced re…