Mechanism and Scalability in Resistive Switching of Metal-Pr0.7Ca0.3MnO3 Interface

Abstract

The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size-scalability, may be altered through interface treatments.

arXiv comment4 pages, 3 figures

References in corpus (4)

• Materials with Colossal Dielectric Constant: Do They Exist?
• Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$ interface
• Field-Driven Hysteretic and Reversible Resistive Switch at the Ag-Pr0.7Ca0.3MnO3 Interface
• Field-Induced Resistive Switching in Metal-Oxide Interfaces

Cited by in corpus (1)

• Evidance for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides