On the beneficial role of noise in resistive switching

Abstract

We study the effect of external noise on resistive switching. Experimental results on a manganite sample are presented showing that there is an optimal noise amplitude that maximizes the contrast between high and low resistive states. By means of numerical simulations, we study the causes underlying the observed behavior. We find that experimental results can be related to general characteristics of the equations governing the system dynamics.

4 pages, 5 figures

References in corpus (5)

• Mechanism for bipolar resistive switching in transition metal oxides
• Stochastic memory: memory enhancement due to noise
• Hysteresis Switching Loops in Ag-manganite memristive interfaces
• Asymmetric pulsing for reliable operation of titanium/manganite memristors
• Resistive Switching Assisted by Noise

Cited by in corpus (4)

• Stochastic resonance in a metal-oxide memristive device
• Solitonic Josephson-based meminductive systems
• Stochastic Dynamics of Resistive Switching: Fluctuations Lead to Optimal Particle Number
• Noise-Assisted Metastability: From Lévy Flights to Memristors, Quantum Escape, and Josephson-based Axion Searches