activity
20102016
most citedMechanism for bipolar resistive switching in transition metal oxides

202 citations · 290 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2016

Manganite-based three level memristive devices with self-healing capability

W. Román Acevedo, D. Rubi, J. Lecourt +5

We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/Mn/n-Si devices is explo…

cond-mat.mtrl-sci2011★ 34 cited

Decoupling electrocaloric effect from Joule heating in a solid state cooling device

M. Quintero, F. Gomez-Marlasca, L. Ghivelder +1

We report a heat dynamics analysis of the electrocaloric effect (ECE) in commercial multilayer capacitors based on BaTiO3 dielectric, a promising candidate for applications as a so…

cond-mat.mtrl-sci2011★ 16 cited

Asymmetric pulsing for reliable operation of titanium/manganite memristors

F. Gomez-Marlasca, N. Ghenzi, P. Stoliar +4

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm t…

cond-mat.other2010★ 38 cited

Hysteresis Switching Loops in Ag-manganite memristive interfaces

N. Ghenzi, M. J. Sanchez, F. Gomez-Marlasca +2

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies di…

cond-mat.mtrl-sci2010★ 202 cited

Mechanism for bipolar resistive switching in transition metal oxides

M. J. Rozenberg, M. J. Sanchez, R. Weht +3

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migrat…