C. Ferreyra

activity

20152024

most citedOn the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

29 citations · 76 across the 9 of their papers we have counts for

collaborators

Showing 2019Show all

2 papers · 1 filter

physics.app-ph2019★ 16 cited

Electric selective activation of memristive interfaces in TaO $_{x}$ -based devices

C. Ferreyra, M. J. Sánchez, M. Aguirre +5

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functi…

physics.app-ph2019★ 10 cited

Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface

W. R. Acevedo, C. A. M. van den Bosch, M. H. Aguirre +7

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive system…

Electric selective activation of memristive interfaces in TaOx​-based devices

Large memcapacitance and memristance at Nb:SrTiO3​ / La0.5​Sr0.5​Mn0.5​Co0.5​O3−δ​ Topotactic Redox Interface

Electric selective activation of memristive interfaces in TaO $_{x}$ -based devices

Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface