C. Ferreyra

activity

20152024

most citedOn the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

29 citations · 76 across the 9 of their papers we have counts for

collaborators

Showing 2024Show all

2 papers · 1 filter

cond-mat.mes-hall2024

Oxygen vacancies kinetics in $T a O_{2 - h}$ / $T a_{2}$ $O_{5 - x}$ memristive interfaces

C. Ferreyra, R. Leal Martir, D. Rubi +1

Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combina…

physics.app-ph2024

Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO $_{2}$ -based devices

C. Ferreyra, M. Badillo, M. J. Sánchez +3

Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization…

Oxygen vacancies kinetics in TaO2−h​/Ta2​O5−x​ memristive interfaces

Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO2​-based devices

Oxygen vacancies kinetics in $T a O_{2 - h}$ / $T a_{2}$ $O_{5 - x}$ memristive interfaces

Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO $_{2}$ -based devices