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physics.app-ph2020
On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
C. Ferreyra, M. Rengifo, M. J. Sánchez +3
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of…
physics.app-ph2019
Electric selective activation of memristive interfaces in TaO-based devices
C. Ferreyra, M. J. Sánchez, M. Aguirre +5
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functi…