6 papers
Device-area selection of memristive transport regimes in epitaxial -based ferroelectric devices
Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…
Tuning the memristive response of TaO-based devices with Ag Nanoparticles
R. Leal Martir, A. J. T. van der Ree, M. H. Aguirre +3
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and ruptur…
Oxygen vacancy engineering in pulsed laser deposited BaSnO thin films on SrTiO
Wilson Román Acevedo, Myriam H. Aguirre, Beatriz Noheda +1
We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn, BSO) thin films by precisely controlling the background oxygen pr…
Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices
Wilson Román Acevedo, Myriam H. Aguirre, Diego Rubi
Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observ…
Large memcapacitance and memristance at Nb:SrTiO / LaSrMnCoO Topotactic Redox Interface
W. R. Acevedo, C. A. M. van den Bosch, M. H. Aguirre +7
The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive system…
Co-sputtered PtMnSb thin films and PtMnSb/Pt bilayers for spin-orbit torque investigations
Jan Krieft, Johannes Mendil, Myriam H. Aguirre +7
The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memori…