Myriam H. Aguirre

activity

20162026

most citedLarge memcapacitance and memristance at Nb:SrTiO

_{3}

/ La

_{0.5}

_{0.5}

_{0.5}

_{0.5}

_{3 - δ}

Topotactic Redox Interface

10 citations · 16 across the 6 of their papers we have counts for

collaborators

Showing cond-mat.mes-hallShow all

2 papers · 1 filter

cond-mat.mes-hall2026

Tuning the memristive response of TaO $_{x}$ -based devices with Ag Nanoparticles

R. Leal Martir, A. J. T. van der Ree, M. H. Aguirre +3

Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and ruptur…

cond-mat.mes-hall2016★ 6 cited

Co-sputtered PtMnSb thin films and PtMnSb/Pt bilayers for spin-orbit torque investigations

Jan Krieft, Johannes Mendil, Myriam H. Aguirre +7

The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memori…

Tuning the memristive response of TaOx​-based devices with Ag Nanoparticles

Co-sputtered PtMnSb thin films and PtMnSb/Pt bilayers for spin-orbit torque investigations

Tuning the memristive response of TaO $_{x}$ -based devices with Ag Nanoparticles