Myriam H. Aguirre

activity

20162026

most citedLarge memcapacitance and memristance at Nb:SrTiO

_{3}

/ La

_{0.5}

_{0.5}

_{0.5}

_{0.5}

_{3 - δ}

Topotactic Redox Interface

10 citations · 16 across the 6 of their papers we have counts for

collaborators

Showing 2026Show all

3 papers · 1 filter

cond-mat.mtrl-sci2026

Engineering Synaptic Dynamics in Ag-Modified TaO $_{x}$ Memristive Devices

R. Leal Martir, W. Quiñonez, A. J. T. van der Ree +4

Engineering not only the magnitude but also the dynamics of synaptic weight updates is an important challenge for memristive neuromorphic hardware. Here, we show that Ag modificati…

cond-mat.mtrl-sci2026

Device-area selection of memristive transport regimes in epitaxial $H f_{0.5} Z r_{0.5} O_{2}$ -based ferroelectric devices

Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5

Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…

cond-mat.mes-hall2026

Tuning the memristive response of TaO $_{x}$ -based devices with Ag Nanoparticles

R. Leal Martir, A. J. T. van der Ree, M. H. Aguirre +3

Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and ruptur…

Engineering Synaptic Dynamics in Ag-Modified TaOx​ Memristive Devices

Device-area selection of memristive transport regimes in epitaxial Hf0.5​Zr0.5​O2​-based ferroelectric devices

Tuning the memristive response of TaOx​-based devices with Ag Nanoparticles

Engineering Synaptic Dynamics in Ag-Modified TaO $_{x}$ Memristive Devices

Device-area selection of memristive transport regimes in epitaxial $H f_{0.5} Z r_{0.5} O_{2}$ -based ferroelectric devices

Tuning the memristive response of TaO $_{x}$ -based devices with Ag Nanoparticles