Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

Abstract

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.

Cited by in corpus (14)

• Oxide spintronics
• Correlated Electron Materials and Field Effect Transistors for Logic: A Review
• Electrostatic Tuning of the Superconductor-Insulator Transition in Two Dimensions
• Growth mode control of the free carrier density in SrTiO3-d films
• Low temperature metallic state induced by electrostatic carrier doping of SrTiO${}_3$
• Field Effect Transistor Based on KTaO3 Perovskite
• Full oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor
• Relaxation of transport properties in electron doped SrTiO3
• Metallicity of the SrTiO3 surface induced by room temperature evaporation of alumina
• Interface-mediated pairing in field effect devices
• Electric-Field Modulation of Thermopower for the KTaO3 Field Effect Transistors
• Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO${}_3$ interface by electric field
• Gate voltage control of the $Al{O}_x$/$SrTi{O}_3$ interface electrical properties
• A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor