Interface-mediated pairing in field effect devices

Abstract

We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.

11 pages, 11 figures, text and figures updated to published version

References in corpus (3)

• Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
• Charge profile of surface doped C60
• Reentrant charge ordering caused by polaron formation

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• Electrostatic interface tuning in correlated superconducting heterostructures
• Artificial Atoms Based on Correlated Materials
• Interface-induced d-wave pairing
• Electronic charge and orbital reconstruction at cuprate-titanate interfaces
• Interfacial superconductivity in Cu/Cu${}_2$O and its effect on shielding ambient electric fields