Electrostatic interface tuning in correlated superconducting heterostructures

Abstract

An electrostatic field, which is applied to a gated high-temperature superconducting (HTSC) film, is believed to affect the film similar to charge doping. Analyzing the pairing in terms of a t-J model, we show that a coupling to electric dipoles and phonons at the interface of film and dielectric gate localizes the injected charge and leads to a superconductor-insulator transition. This results in a dramatic modification of the doping dependent phase diagram close to and above the optimal doping which is expected to shed light on recent electric field-effect experiments with HTSC cuprates.

6 pages, 6 figures, to appear in Physical Review B

References in corpus (7)

• Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
• Electric Field Effect in Diluted Magnetic Insulator Anatase Co:TiO2
• Physics of cuprates with the two-band Hubbard model - The validity of the one-band Hubbard model
• Charge profile of surface doped C60
• Interface-mediated pairing in field effect devices
• Modulation of Superconducting Properties by Ferroelectric Polarization in Confined FE-S-FE Films
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• Structural relaxation and metal-insulator transition at the interface between SrTiO3 and LaAlO3
• Interface controlled electronic charge inhomogeneities in correlated heterostructures
• Artificial Atoms Based on Correlated Materials
• Exact results with the Kotliar-Ruckenstein slave-boson representation
• Theory of coexistence of superconductivity and ferroelectricity
• Magnetically ordered state at correlated oxide interfaces: the role of random oxygen defects
• Electronic charge and orbital reconstruction at cuprate-titanate interfaces