Structural relaxation and metal-insulator transition at the interface between SrTiO3 and LaAlO3
arXiv:0901.4610 · doi:10.1016/j.susc.2011.03.016
Abstract
The electronic structure of interfaces between LaAlO and SrTiO is studied using local spin density approximation (LSDA) with intra-atomic Coulomb repulsion (LSDA+U). We find that the nature of the interface metallic states is strongly affected by the type of the structure (sandwich or bilayer) and by the termination surface of LaAlO. In all structures the atomic relaxation plays a crucial role in the electronic properties of the system. While in sandwiches the structural relaxation produces a significant polarization in SrTiO and Jahn-Teller like splitting of Ti orbitals, in AlO-terminated bilayers the relaxation occurs primarily in LaAlO and results in an insulator-metal transition which has been observed experimentally with increasing thickness of the LaAlO layer.
10 pages, 16 figures
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Cited by in corpus (13)
- Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO/SrTiO Interfaces
- "Water-cycle" mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface
- Magnetism and superconductivity at LAO/STO-interfaces: the role of Ti 3d interface electrons
- Oxygen vacancies at titanate interfaces: two-dimensional magnetism and orbital reconstruction
- Emerging magnetism and electronic phase separation at titanate interfaces
- Termination control of electronic phases in oxide thin films and interfaces: LaAlO3/SrTiO3(001)
- Electronic charge redistribution in LaAlO(001) thin films deposited at SrTiO(001) substrate: First principles analysis and the role of stoichiometry
- Metal-insulator transition at the LaAlO3/SrTiO3 interface revisited: A hybrid functional study
- Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction
- Electronic properties of LaAlO3/SrTiO3 n-type interfaces: A GGA+U study
- The mechanism of spin-orbit coupling in a 2D oxide interface
- Hydrostatic pressure response of an oxide two-dimensional electron system
- Magnetically ordered state at correlated oxide interfaces: the role of random oxygen defects