Interface hole-doping in cuprate-titanate superlattices

Abstract

The electronic structure of interfaces between YBa${}_2$Cu${}_3$O${}_6$ and SrTiO${}_3$ is studied using local spin density approximation (LSDA) with intra-atomic Coulomb repulsion (LSDA+U). We find a metallic state in cuprate/titanate heterostructures with the hole carriers concentrated substantially in the CuO${}_2$-layers and in the first interface TiO${}_2$ and SrO planes. This effective interface doping appears due to the polarity of interfaces, caused by the first incomplete copper oxide unit cell. Interface-induced high pre-doping of CuO${}_2$-layers is a key mechanism controlling the superconducting properties in engineered field-effect devices realized on the basis of cuprate/titanate superlattices.

5 pages, 5 figures

References in corpus (2)

• Physics of cuprates with the two-band Hubbard model - The validity of the one-band Hubbard model
• Electrostatic interface tuning in correlated superconducting heterostructures

Cited by in corpus (2)

• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• Mechanism of orbital reconstruction at the interfaces of transition metal oxides