Exponential decay of relaxation effects at LaAlO3/SrTiO3 heterointerfaces
arXiv:0902.4580 · doi:10.1016/j.cplett.2008.11.054
Abstract
We study the decay of interface induced structural and electronic relaxation effects in epitaxial LaAlO3/SrTiO3 heterostructures. The results are based on first-principles band structure calculations for a multilayer configuration with an ultrathin LaAlO3 layer sandwiched between bulk-like SrTiO3 layers. We carry out the structure optimization for the heterointerface and investigate the electronic states of the conducting interface layer, which is found to extend over two SrTiO3 unit cells. The decay of atomic displacements is analyzed as a function of the distance to the interface, and the resulting exponential law is evaluated quantitatively.
References in corpus (10)
- High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
- Lattice polarization effects on electron-gas charge densities in ionic superlattices
- Electronic properties of buried hetero-interfaces of LaAlO3 on SrTiO3
- Surface Effects on Oxide Heterostructures
- Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results
- Charge redistribution at YBa2Cu3O7-metal interfaces
- Electronic structure of the c(4 x 2) reconstructed Ge(001) surface
- Self-assembled Pt nanowires on Ge(001): Relaxation effects
- Confined Ge-Pt states in self-organized Pt nanowire arrays on Ge(001)
- Geometry dependence of the charge transfer at YBa2Cu3O7-metal interfaces