Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results
arXiv:cond-mat/0702098 · doi:10.1209/0295-5075/77/37007
Abstract
Charge redistribution in high-Tc superconductors due to structural defects or interfaces is known to be crucial for electronic applications as the band structure is modified on a local scale. In order to investigate these effects in more detail, we address the normal-state properties of YBa2Cu3O7 (YBCO) in the vicinity of YBCO-metal interfaces by electronic structure calculations for well relaxed interface configurations. Our findings can be interpreted in terms of a band-bending mechanism complemented by local screening effects. We derive quantitative results for the intrinsic doping of the superconducting CuO2 planes due to the metal interface. In particular, the net charge transfer amounts to 0.13 electrons in favour of each intraplane copper site, which appears to be a typical value for interfaces of high-Tc superconductors, thus opening great possibilities for a systematic optimization of wires and tapes from high-Tc materials.
7 pages, 3 figures
References in corpus (4)
- Investigation of A1g phonons in YBa2Cu3O7 by means of LAPW atomic-force calculations
- Equilibrium Properties of Double-Screened-Dipole-Barrier SINIS Josephson Junctions
- Charge Modulation at the Surface of High-T_c Superconductors
- Electronic Transport through YBCO Grain Boundary Interfaces between 4.2 K and 300 K
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