Charge redistribution at YBa2Cu3O7-metal interfaces

Abstract

Charge redistribution at interfaces is crucial for electronic applications of high-Tc superconductors, since the band structure is modified on a local scale. We address the normal-state electronic structure of YBa2Cu3O7 (YBCO) at an YBCO-metal contact by first principles calculations for prototypical interface configurations. We derive quantitative results for the intrinsic doping of the superconducting CuO2 planes due to the metal contact. Our findings can be explained in terms of a band-bending mechanism, complemented by local screening effects. We determine a net charge transfer of 0.09 to 0.13 electrons in favour of the intraplane Cu sites, depending on the interface orientation.

3 pages, 2 figures, submitted to Appl. Phys. Lett

References in corpus (6)

• Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results
• Investigation of A1g phonons in YBa2Cu3O7 by means of LAPW atomic-force calculations
• Equilibrium Properties of Double-Screened-Dipole-Barrier SINIS Josephson Junctions
• Charge Modulation at the Surface of High-T_c Superconductors
• Electronic structure of the Au/benzene-1,4-dithiol/Au transport interface: Effects of chemical bonding
• Geometry Effects at Atomic-Size Aluminium Contacts

Cited by in corpus (9)

• Surface Effects on Oxide Heterostructures
• Interface relaxation and electrostatic charge depletion in the oxide heterostructure LaAlO3/SrTiO3
• Exponential decay of relaxation effects at LaAlO3/SrTiO3 heterointerfaces
• Electronic structure of the c(4 x 2) reconstructed Ge(001) surface
• Self-assembled Pt nanowires on Ge(001): Relaxation effects
• Magnetic ordering in the striped nickelate La5/3Sr1/3NiO4: A band structure point of view
• Geometry dependence of the charge transfer at YBa2Cu3O7-metal interfaces
• Quantitative calculations of charge carrier densities in the depletion layers at YBa2Cu3O7-x interfaces
• Electronic transport calculations for rough interfaces in Al, Cu, Ag, and Au