Electronic structure of the c(4 x 2) reconstructed Ge(001) surface
arXiv:0710.4841 · doi:10.1016/j.cplett.2007.10.060
Abstract
We investigate the electronic structure of the c(4 x 2) reconstructed Ge(001) surface using band structure calculations based on density functional theory and the generalized gradient approximation. In particular, we take into account the details of surface reconstruction by means of well relaxed crystal structures. The surface electronic states are identified and the local density of states is compared to recent data from scanning tunneling spectroscopy. We obtain almost perfect agreement between theory and experiment for both the occupied and unoccupied states, which allows us to clarify the interpretation of the experimental data.
4 pages, 3 figures, accepted by Chem. Phys. Lett
References in corpus (4)
- Intrinsic Doping at YBCO-metal Interfaces: Quantitative Results
- Conduction States with Vanishing Dimerization in Pt Nanowires on Ge(001) Observed with Scanning Tunneling Microscopy
- Charge redistribution at YBa2Cu3O7-metal interfaces
- Electronic structure of the Au/benzene-1,4-dithiol/Au transport interface: Effects of chemical bonding
Cited by in corpus (6)
- Interface relaxation and electrostatic charge depletion in the oxide heterostructure LaAlO3/SrTiO3
- Exponential decay of relaxation effects at LaAlO3/SrTiO3 heterointerfaces
- Self-assembled Pt nanowires on Ge(001): Relaxation effects
- Confined Ge-Pt states in self-organized Pt nanowire arrays on Ge(001)
- Prediction of femtosecond oscillations in the transient current of a quantum dot in the Kondo regime
- Influence of the vacuum interface on the charge distribution in V2O3 thin films