Influence of the vacuum interface on the charge distribution in V2O3 thin films

Abstract

The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of approx. 15 Angstroem thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness-dependence of the metal-insulator transition observed in V2O3 thin films of 100-1000 Angstroem thickness.

arXiv comment6 pages, 13 figures, more information at http://www.physik.uni-augsburg.de/~eyert/

References in corpus (15)

• Universality and Critical Behavior at the Mott transition
• Mott-Hubbard Metal-Insulator Transition in Paramagnetic V_2O_3: a LDA+DMFT(QMC) Study
• The vanadium Magneli phases VnO(2n-1)
• Electronic Structure of Paramagnetic V_2O_3: Strongly Correlated Metallic and Mott Insulating Phase
• Surface dead layer for quasiparticles near a Mott transition
• Surface Effects on Oxide Heterostructures
• Thickness-dependence of the electronic properties in V2O3 thin films
• Interface relaxation and electrostatic charge depletion in the oxide heterostructure LaAlO3/SrTiO3
• Covalent bonding and hybridization effects in the corundum-type transition-metal oxides V2O3 and Ti2O3
• Exponential decay of relaxation effects at LaAlO3/SrTiO3 heterointerfaces
• From VO2 to V2O3: The Metal-Insulator Transition of the Magneli Phase V6O11
• Electronic structure of the c(4 x 2) reconstructed Ge(001) surface
• The Metal-Insulator Transition of the Magneli phase V_4O_7: Implications for V_2O_3
• Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence
• Substrate effects on V2O3 thin films