Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence

Abstract

The thermal hysteresis of the electronic transport properties were studied for V2O3 thin films. The temporal evolution of the resistance shows the out-of-equilibrium nature of this hysteresis with a very slow relaxation. Partial cycles reveal not only a behavior consistent with phase coexistence, but also the presence of spinodal temperatures which are largely separated. The temperature spreading of phase coexistence is consistent with the bulk phase diagram in the pressure-temperature plane, confirming that the film is effectively under an effective pressure induced by the substrate.

arXiv commentAccepted for publication in Europhysics Letters

References in corpus (3)

• Colossal magnetoresistive manganite thin films
• Thickness-dependence of the electronic properties in V2O3 thin films
• Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3

Cited by in corpus (5)

• Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition
• Kinetic Spinodal Instabilities in the Mott Transition in V2O3: Evidence from Hysteresis Scaling and Dissipative Phase Ordering
• First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure
• Galvanomagnetic properties and noise in a barely metallic film of V2O3
• Influence of the vacuum interface on the charge distribution in V2O3 thin films