Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Abstract

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits to observe that the mobility of the charge carriers systematically decreases with increasing the dielectric constant of the gate insulator, the decrease being proportional to (epsilon)-1. This finding demonstrates that the mobility of carriers in organic single-crystal field-effect transistors is an intrinsic property of the crystal/dielectric interface and that it does not only depend on the specific molecule used.

9 pages, 4 figures

Cited by in corpus (25)

• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Tunable Frohlich Polarons in Organic Single-Crystal Transistors
• Substrate limited electron dynamics in graphene
• Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization
• The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals
• Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors
• Single-Crystal Organic Charge-Transfer Interfaces probed using Schottky-Gated Heterostructures
• Electrolyte-gated organic synapse transistor interfaced with neurons
• Quantum coherence and carriers mobility in organic semiconductors
• Thermopower measurements on pentacene transistors
• High charge-carrier mobility and low trap density in a rubrene derivative
• High-performance $n$-type organic field-effect transistors with ionic liquid gates
• Polarization effects in the channel of an organic field-effect transistor
• Reproducible Low Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors with Nickel Source and Drain Electrodes
• Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors
• Low-Voltage Printed, All-Polymer Integrated Circuits Employing a Low-leakage and High-Yield Polymer Dielectric
• Bias-dependent Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors
• Tuning the charge transfer in Fx-TCNQ/rubrene single-crystal interfaces
• Electron-phonon and electron-electron interactions in organic field effect transistors
• A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications
• Electrostatic interface tuning in correlated superconducting heterostructures
• Charge transfer, band-like transport, and magnetic ions at F16CoPc/rubrene interfaces
• Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors
• Effects of different electron-phonon couplings on spectral and transport properties of small molecule single-crystal organic semiconductors
• In situ determination of the energy dependence of the high-frequency mobility in polymers