most citedInfluence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

303 citations · 353 across the 2 of their papers we have counts for

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2 papers

cond-mat.other2004★ 50 cited

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

R. W. I. de Boer, N. N. Iosad, A. F. Stassen +2

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespecti…

cond-mat.mtrl-sci2004★ 303 cited

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

A. F. Stassen, R. W. I. de Boer, N. N. Iosad +1

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproduci…