Polarization effects in the channel of an organic field-effect transistor

Abstract

We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge-carrier in the quasi-two dimensional channel of a pentacene transistor by a factor of two from its bulk value when the gate is a high-permittivity dielectric such as $({\text{Ta}}_2{\text{O}}_5)$ while this reduction essentially vanishes using a polymer gate-insulator. These results demonstrate that carrier mass renormalization triggers the dielectric effects on the mobility reported recently in OFETs.

arXiv comment19 pages, 3 figures

References in corpus (5)

• Intrinsic charge transport on the surface of organic semiconductors
• Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
• Electronic polarization in pentacene crystals and thin films
• Ultrathin Organic Transistors on Oxide Surfaces
• The Impact of Molecular Polarization on the Electronic Properties of Molecular Semiconductors

Cited by in corpus (8)

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• Origin of Reduced Polaron Recombination in Organic Semiconductor Devices
• Effect of shallow traps on polaron transport at the surface of organic semiconductors
• Distribution of Localized States from Fine Analysis of Electron Spin Resonance Spectra in Organic Transistors
• Quantum coherence and carriers mobility in organic semiconductors
• Thermopower measurements on pentacene transistors
• Distribution of localized states from fine analysis of electron spin resonance spectra of organic semiconductors: Physical meaning and methodology
• Electronic transport properties through thiophenes on switchable domains