Effect of shallow traps on polaron transport at the surface of organic semiconductors
arXiv:cond-mat/0610851 · doi:10.1103/PhysRevLett.98.096402
Abstract
The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed to estimate the average polaron trapping time, tau_tr = 50 +- 10 ps, and the density of shallow traps, N_0 = (3 +- 0.5)*10^11 cm^-2, in the channel of single-crystal tetracene devices.
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Cited by in corpus (5)
- Modeling Space-Charge Limited Currents in Organic Semiconductors: Extracting Trap Density and Mobility
- Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance
- Quantum coherence and carriers mobility in organic semiconductors
- Polarized superradiance from delocalized exciton transitions in tetracene single crystals
- Distribution of localized states from fine analysis of electron spin resonance spectra of organic semiconductors: Physical meaning and methodology