Interfacial superconductivity in Cu/CuO and its effect on shielding ambient electric fields
arXiv:2505.02328 · doi:10.1016/j.physc.2024.1354600
Abstract
A model is presented for two-dimensional superconductivity at semiconductor-on-metal interfaces mediated by Coulomb interactions between electronically-active interface charges in the semiconductor and screening charges in the metal. The junction considered is native CuO on Cu in which an interfacial double charge layer of areal density , comprising superconducting holes in CuO and mediating electrons in Cu, is induced in proportion to a sub-monolayer of adsorbed atoms. Evidence for superconductivity on copper with prior air exposure is revealed in new analysis of previously published work function data. Based on a theory developed for layered superconductors, the intrinsic transition temperature = / is determined by and transverse distance 2.0 between the charge layers; = 1.933(6) /k = 1247.4(3.7) K- is a universal constant involving the reduced Compton wavelength of the electron . This model is applied to understanding the shielding of copper work-function patch and gravitational compression electric fields reported in the Witteborn-Fairbank gravitational electron free fall experiment. Interfacial superconductivity with 1.6 10 7.9 K and Berezinskiĭ-Kosterlitz-Thouless temperature 4.4 K accounts for the shielding observed at temperature 4.2 K. Helium desorption and concomitant decreases in and replicate the temperature transition in ambient electric fields on falling electrons, as observed by Lockhart et al., and the vanishing of superconductivity above 4.8 K.
arXiv comment20 pages, 9 figures, 18 equations, 111 references
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