Oxide spintronics
arXiv:0706.3015 · doi:10.1109/TED.2007.894366
Abstract
Concomitant with the development of metal-based spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition metal oxides, and notably mixed-valence manganites. The discovery of colossal magnetoresistance in manganite films triggered an intense research activity on these materials, but the first notable impact of magnetic oxides in the field of spintronics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios one order of magnitude larger than what had been obtained with transition metal electrodes. Since then, the research on oxide spintronics has been intense with the latest developments focused on diluted magnetic oxides and more recently on multiferroics. In this paper, we will review the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronics devices.
Invited review paper published in a Special Issue of IEEE Transactions on Electron Devices on Spintronics
References in corpus (14)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Giant sharp magnetoelectric switching in multiferroic epitaxial La_{0.67}Sr_{0.33}MnO_3 on BaTiO_3
- Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions
- Electric field control of exchange bias in multiferroic epitaxial heterostructures
- Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions
- Structural distortion and magnetism of BiFeO3 epitaxial thin films: a Raman spectroscopy and neutron diffraction study
- Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films
- Room temperature spin coherence in ZnO
- Signature of Carrier-Induced Ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta}: Exchange Interaction Between High-Spin Co 2+ and the Ti 3d Conduction Band
- Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
- Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
- Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111)
- Modulation Doping near Mott-Insulator Heterojunctions
- Metallic interface at the boundary between band and Mott insulators
Cited by in corpus (5)
- Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films
- Structure and magnetism in ultrathin iron oxides characterized by low energy electron microscopy
- Magnetoresistance in an all-manganite heterostructure
- Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier
- Magnetic and transport properties of the one-dimensional ferromagnetic Kondo lattice model with an impurity