A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction
arXiv:cond-mat/0507137 · doi:10.1143/JJAP.44.L896
Abstract
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.
9 pages, 4 figures
References in corpus (5)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Magnetic oxide semiconductors
- Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions
- Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions
- Evolution of ferromagnetic circular dichroism coincident with magnetization and anomalous Hall effect in Co-doped rutile TiO2
Cited by in corpus (5)
- Oxide spintronics
- Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2
- Anomalous Hall effect in anatase Ti1-xCoxO2 at low temperature regime
- Consequences of niobium doping for the ferromagnetism and microstructure of anatase Co: TiO2 films
- X-ray Anomalous Scattering of Diluted Magnetic Oxide Semiconductors: Possible Evidence of Lattice Deformation for High Temperature Ferromagnetism