Spin-filter magnetoresistance in magnetic barrier junctions

Abstract

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations are based on the transfer matrix method and the free-electron approximation. The numerical results show that the spin transport depends on the relative magnetization orientation of the FM electrode and the spin-filter barrier, such that the tunnel current reaches its maximum when the magnetic moments of the FM electrode and the magnetic barrier are parallel. It is also found that the TMR increases with increasing the applied voltage.

11 pages, 4 PS figures; to appear in J. Magn. Magn. Mater. (in press)

References in corpus (3)

• Large magnetoresistance using hybrid spin filter devices
• Spin filtering and magnetoresistance in ballistic tunnel junctions
• Tunnel magnetoresistance in double spin filter junctions

Cited by in corpus (7)

• Oxide spintronics
• Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers
• Spin filtering through ferromagnetic BiMnO3 tunnel barriers
• Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers
• The effects of a magnetic barrier and a nonmagnetic spacer in tunnel structures
• Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures
• Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer