Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes
arXiv:cond-mat/0508548 · doi:10.1103/PhysRevLett.95.137203
Abstract
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.
To appear in Physical Review Letters
References in corpus (3)
Cited by in corpus (12)
- Oxide spintronics
- Oxide spin-orbitronics: spin-charge interconversion and topological spin textures
- Direct observation of a highly spin-polarized organic spinterface at room temperature
- Thermal collapse of spin-polarization in half-metallic ferromagnets
- Half-metallic ferromagnets for magnetic tunnel junctions
- Ab-initio electronic and magnetic structure in La_0.66Sr_0.33MnO_3: strain and correlation effects
- Suppressed Magnetization at the Surfaces and Interfaces of Ferromagnetic Metallic Manganites
- Crossed Andreev reflection-induced magnetoresistance
- Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides
- Interfacial Magnetism in Complex Oxide Heterostructures Probed by Neutrons and X-rays
- Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganites
- Ultra-low-power orbital-controlled magnetization switching using a ferromagnetic oxide interface