Thin-Film Trilayer Manganate Junctions

Abstract

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La${}_{0.67}$Sr${}_{0.33}$MnO${}_3$% -SrTiO${}_3$-La${}_{0.67}$ Sr${}_{0.33}$MnO${}_3$ trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

20 pages, 14 figures. To appear in Phil. Trans. R. Soc. Lond. A vol.356 (1998)