Spin Resistivity in Frustrated Antiferromagnets
arXiv:1006.1081 · doi:10.1103/PhysRevB.83.144406
Abstract
In this paper we study the spin transport in frustrated antiferromagnetic FCC films by Monte Carlo simulation. In the case of Ising spin model, we show that the spin resistivity versus temperature exhibits a discontinuity at the phase transition temperature: an upward jump or a downward fall, depending on how many parallel and antiparallel localized spins interacting with a given itinerant spin. The surface effects as well as the difference of two degenerate states on the resistivity are analyzed. Comparison with non frustrated antiferromagnets is shown to highlight the frustration effect. We also show and discuss the results of the Heisenberg spin model on the same lattice.
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Cited by in corpus (5)
- Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe
- Spin Resistivity in the Frustrated Model
- Spin transport in magnetically ordered systems: effect of the lattice relaxation time
- Spin Transport in Magnetically Ordered Systems: Ferromagnets, Antiferromagnets and Frustrated Systems
- Theory and Simulation of Magnetic Materials: Physics at Phase Frontiers