Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe

Abstract

We investigate in this paper properties of the spin resistivity in the magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with the Néel temperature around 310K. Due to this high Néel temperature, there are many applications using its magnetic properties. The method we use here is the Monte Carlo simulation in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the Néel temperature.

References in corpus (3)

• Anisotropy in the electrical resistivity and susceptibility of superconducting BaFe${}_2$As${}_2$ single crystals
• Peculiar behavior of the electrical resistivity of MnSi at the ferromagnetic phase transition
• Effects of Ferromagnetic Magnetic Ordering and Phase Transition on the Resistivity of Spin Current

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