Growth mode control of the free carrier density in SrTiO3-d films

Abstract

We have studied the growth dynamics and electronic properties of SrTiO3-d homoepitaxial films by pulsed laser deposition. We find the two dominant factors determining the growth mode are the kinetics of surface crystallization and oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies can be frozen in the film, allowing controlled, systematic doping across a metal-insulator transition. Metallic films can be grown, exhibiting Hall mobilities as high as 25,000 cm2/Vs.

6 pages, 9 figures

References in corpus (1)

• Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

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