Polarity-induced oxygen vacancies at LaAlO3|SrTiO3 interfaces
arXiv:1006.5146 · doi:10.1103/PhysRevB.82.165127
Abstract
Using first-principles density functional theory calculations, we find a strong position and thickness dependence of the formation energy of oxygen vacancies in LaAlO3|SrTiO3 (LAO|STO) multilayers and interpret this with an analytical capacitor model. Oxygen vacancies are preferentially formed at p-type SrO|AlO2 rather than at n-type LaO|TiO2 interfaces; the excess electrons introduced by the oxygen vacancies reduce their energy by moving to the n-type interface. This asymmetric behavior makes an important contribution to the conducting (insulating) nature of n-type (p-type) interfaces while providing a natural explanation for the failure to detect evidence for the polar catastrophe in the form of core level shifts.
References in corpus (11)
- Magnetic effects at the interface between nonmagnetic oxides
- Electric Field Control of the LaAlO/SrTiO Interface Ground State
- High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
- Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
- Avoiding the polarization catastrophe in LaAlO3 overlayers on SrTiO3(001) through a polar distortion
- Origin of Metallic States at Heterointerface between Band Insulators LaAlO and SrTiO
- Growth mode control of the free carrier density in SrTiO3-d films
- Electronic structure induced reconstruction and magnetic ordering at the LaAlOSrTiO interface
- Oxide superlattices with alternating p and n interfaces
- Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides
- Charge ordering and magnetism in quarter-filled Hubbard-Holstein model