Two components for one resistivity in LaVO3/SrTiO3 heterostructures

Abstract

A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained.

arXiv commentImproved version as accepted in Journ Phys: Cond Mat. Additional Optical measurements are presented

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• Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water
• Enhanced charge-transfer character in the monoclinic phase of Mott-insulator LaVO3 thin film
• Hard X-ray photoemission spectroscopy of LaVO${}_3$/SrTiO${}_3$: Band alignment and electronic reconstruction