Relaxation of transport properties in electron doped SrTiO3

Abstract

We electron-dope single crystal samples of SrTiO_3 by exposing them to Ar^+ irradiation and observe carrier mobility similar in its magnitude and temperature dependence to the carrier mobility in other electron-doped SrTiO3 systems. We find that some transport properties are time-dependent. In particular, the sheet resistance increases with time at a temperature-dependent rate, suggesting an activation barrier on the order of 1 eV. We attribute the relaxation effects to diffusion of oxygen vacancies - a process with energy barrier similar to the observed activation energy.

References in corpus (4)

• The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

Cited by in corpus (7)

• Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar^+ -irradiated KTaO_3
• Dynamics of photo-generated non-equilibrium electronic states in Ar${}^{+}$ ion irradiated SrTiO${}_3$
• Tuning the Electronic Properties of LAO/STO Interfaces by Irradiating LAO Surface with Low-Energy Cluster Ion Beams
• Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal
• Gate voltage control of the $Al{O}_x$/$SrTi{O}_3$ interface electrical properties
• Current-induced nonuniform enhancement of sheet resistance in Ar+ irradiated SrTiO3
• Controlling Spin-Mixing Conductance in KTaO${}_3$ 2DEGs by Varying Argon-Ion Irradiation Time