Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal

Abstract

We report controlled formation of sub-100 nm-thin electron channels in SrTiO${}_3$ by doping with oxygen vacancies induced by Ar${}^{+}$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm${}^2$V${}^{-1}$s${}^{-1}$), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics.

References in corpus (4)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Fermi surface of the most dilute superconductor
• Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
• Relaxation of transport properties in electron doped SrTiO3

Cited by in corpus (5)

• Mechanical dissipation from charge and spin transitions in oxygen deficient SrTiO_3
• Spin galvanic effect at the conducting SrTiO3 surfaces
• Controlling the magnetism of oxygen surface vacancies in strontium titanate $(\mathrm{SrTi}{\mathrm{O}}_3)$ through charging
• Multiple Andreev reflections in topological insulator nanoribbons
• Controlling Spin-Mixing Conductance in KTaO${}_3$ 2DEGs by Varying Argon-Ion Irradiation Time