Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

Abstract

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.

arXiv comment6 pages

References in corpus (6)

• Magnetic effects at the interface between nonmagnetic oxides
• Why Some Interfaces Cannot be Sharp
• The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

Cited by in corpus (6)

• Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures
• Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface
• Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3: plasma plume effects
• Interface relaxation and electrostatic charge depletion in the oxide heterostructure LaAlO3/SrTiO3
• Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates
• Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO${}_3$ interface by electric field