activity
20052017
most citedAb initio study of bilateral doping within the MoS2-NbS2 system

115 citations · 492 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2017★ 41 cited

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

M. Marinova, J. E. Rault, A. Gloter +13

The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxid…

cond-mat.mtrl-sci2014★ 14 cited

Direct evidence of tungsten clustering in WVO thin films and its effect on the metal-to-insulator transition

Xiaoyan Li, Alexandre Gloter, Alberto Zobelli +4

Substitutional tungsten doping of VO thin films and its effect on the metal-to-insulator transition are investigated by means of X-ray diffraction, Cs-corrected scanni…

cond-mat.mtrl-sci2011★ 53 cited

Spectroscopic mapping of local structural distortions in ferroelectric PbTiO3/SrTiO3 superlattices at the unit-cell scale

Almudena Torres-Pardo, Alexandre Gloter, Pavlo Zubko +5

The local structural distortions in polydomain ferroelectric PbTiO3/SrTiO3 superlattices are investigated by means of high spatial and energy resolution electron energy loss spectr…

cond-mat.mes-hall2009★ 37 cited

BN domains included into carbon nanotubes: role of interface

Viktoriya V. Ivanovskaya, Alberto Zobelli, Odile Stephan +2

We present a density functional theory study on the shape and arrangement of small BN domains embedded into single-walled carbon nanotubes. We show a strong tendency for the BN hex…

cond-mat.mtrl-sci2008★ 115 cited

Ab initio study of bilateral doping within the MoS2-NbS2 system

Viktoriya V. Ivanovskaya, Alberto Zobelli, Alexandre Gloter +3

We present a systematic study on the stability and the structural and electronic properties of mixed molybdenum-niobium disulphides. Using density functional theory we investigate…

cond-mat.mtrl-sci2007★ 31 cited

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

Jean-Luc Maurice, Gervasi Herranz, Christian Colliex +10

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four ye…